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Obsolete, Hermetic, Disontinued Semiconductors and Vacuum Tubes
Hermetic Semiconductors

Hermetic Semiconductors

SLC are suppliers of obsolete electronic components, parts, peripheral-devices, including hermetic semiconductors.

This site has been designed to give you easy access to the latest discontinued and obsolete products.

Within this area, you will be able to search for a particular part number and view the entire list of products.

SLC is your international independent source for obsolete, hermetic, hard to find, DMS, discontinued semiconductors, transistors and vacuum tubes. SLC offers hermetic components and vacuum tubes that are obsolete or difficult to find. SLC guarantees and certifies that all products meet or exceed ordered electrical specifications.

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SLC purchases excess hermetic and die/wafer inventory. Please contact us with your excess inventory.

Types of semiconductors

Pure or intrinsic semiconductors.

A silicon crystal is different from an insulator because at any temperature above absolute zero temperature, there is a finite probability that an electron in the lattice will be knocked loose from its position, leaving behind an electron deficiency called a "hole". If a voltage is applied, then both the electron and the hole can contribute to a small current flow.

An intrinsic semiconductor is one which is pure enough that impurities do not appreciably affect its electrical behavior. In this case, all carriers are created by thermally or optically exciting electrons from the full valence band into the empty conduction band. Thus equal numbers of electrons and holes are present in an intrinsic semiconductor. Electrons and holes flow in opposite directions in an electric field, though they contribute to current in the same direction since they are oppositely charged. Hole current and electron current are not necessarily equal in an intrinsic semiconductor, however, because electrons and holes have different effective masses (crystalline analogues to free inertial masses).
The concentration of carriers is strongly dependent on the temperature. At low temperatures, the valence band is completely full, making the material an insulator (see electrical conduction for more information). Increasing the temperature leads to an increase in the number of carriers and a corresponding increase in conductivity. This principle is used in thermistors. This behavior contrasts sharply with that of most metals, which tend to become less conductive at higher temperatures due to increased phonon scattering.

Extrinsic semiconductors.

An extrinsic semiconductor is one that has been doped with impurities to modify the number and type of free charge carriers.

N-type doping

The purpose of n-type doping is to produce an abundance of carrier electrons in the material. To help understand how n-type doping is accomplished, consider the case of silicon (Si). Si atoms have four valence electrons, each of which is covalently bonded with one of four adjacent Si atoms. If an atom with five valence electrons, such as those from group VA of the periodic table (eg. phosphorus (P), arsenic (As), or antimony (Sb)), is incorporated into the crystal lattice in place of a Si atom, then that atom will have four covalent bonds and one unbonded electron. This extra electron is only weakly bound to the atom and can easily be excited into the conduction band. At normal temperatures, virtually all such electrons are excited into the conduction band. Since excitation of these electrons does not result in the formation of a hole, the number of electrons in such a material far exceeds the number of holes. In this case the electrons are the majority carriers and the holes are the minority carriers.

P-type doping

The purpose of p-type doping is to create an abundance of holes. In the case of silicon a trivalent atom, such as boron, is substituted into the crystal lattice. The result is that an electron is missing from one of the four possible covalent bonds. Thus the atom can accept an electron from the valence band to complete the fourth bond, resulting in the formation of a hole. Such dopants are called acceptors. When a sufficiently large number of acceptors are added, the holes greatly outnumber the excited electrons. Thus, the holes are the majority carriers, while electrons are the minority carriers in p-type materials.

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